Publicaciones en colaboración con investigadores/as de Universidad de Cádiz (30)

2015

  1. Advances in artificial intelligence: 16th conference of the spanish association for artificial intelligence, CAEPIA 2015 albacete, Spain, November 9-12, 2015 pproceedings

    Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)

2013

  1. Frontiers in network applications, network systems and web services

    2013 Federated Conference on Computer Science and Information Systems, FedCSIS 2013

2002

  1. AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  2. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  3. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

    Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

  4. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

2001

  1. Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 27-31

  2. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392

2000

  1. Control of phase modulation in InGaAs epilayers

    Applied Physics Letters, Vol. 76, Núm. 22, pp. 3236-3238

1999

  1. Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431

  2. Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 302-304

  3. Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers

    Applied Physics Letters, Vol. 74, Núm. 18, pp. 2649-2651

  4. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378

  5. Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 558-561

  6. Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

    Journal of Crystal Growth, Vol. 201, pp. 1085-1088

  7. Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

    Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293

1998

  1. Correlation between optical properties and barrier composition in InxGa1-xGaAs quantum wells

    Journal of Applied Physics, Vol. 84, Núm. 12, pp. 6832-6840

  2. Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems

    Applied Physics Letters, Vol. 72, Núm. 15, pp. 1875-1877

1997

  1. A work-hardening based model of the strain relief in multilayer graded-buffer structures

    Applied Physics Letters, Vol. 71, Núm. 21, pp. 3099-3101

  2. Advantages of thin interfaces in step-graded buffer structures

    Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45