Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

  1. Sánchez, J.J.
  2. Gutiérrez, M.
  3. González, D.
  4. Aragón, G.
  5. Tijero, J.M.G.
  6. Sánchez-Rojas, J.L.
  7. Izpura, I.
  8. García, R.
Aldizkaria:
Microelectronics Journal

ISSN: 0026-2692

Argitalpen urtea: 1999

Alea: 30

Zenbakia: 4

Orrialdeak: 373-378

Mota: Artikulua

DOI: 10.1016/S0026-2692(98)00138-4 GOOGLE SCHOLAR