Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

  1. Gutiérrez, M.
  2. Herrera, M.
  3. González, D.
  4. Aragón, G.
  5. Sánchez, J.J.
  6. Izpura, I.
  7. Hopkinson, M.
  8. García, R.
Revue:
Microelectronics Journal

ISSN: 0026-2692

Année de publication: 2002

Volumen: 33

Número: 7

Pages: 553-557

Type: Communication dans un congrès

DOI: 10.1016/S0026-2692(02)00018-6 GOOGLE SCHOLAR
La source de données: Scopus