New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

  1. Gutiérrez, M.
  2. González, D.
  3. Aragón, G.
  4. Sánchez, J.J.
  5. Izpura, I.
  6. García, R.
Revue:
Microelectronics Journal

ISSN: 0026-2692

Année de publication: 1999

Volumen: 30

Número: 4

Pages: 467-470

Type: Article

DOI: 10.1016/S0026-2692(98)00154-2 GOOGLE SCHOLAR
La source de données: Scopus