Tecnología de estructuras
GITE
Queen Mary University of London
Londres, Reino UnidoQueen Mary University of London-ko ikertzaileekin lankidetzan egindako argitalpenak (1)
1996
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Relaxation behavior of undoped InxGa1-xP 0.5<×<0.7 grown on GaAs by atomic layer molecular-beam epitaxy
Journal of Applied Physics, Vol. 80, Núm. 6, pp. 3327-3332