2002

1. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

   Microelectronics Journal

2. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

   Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

3. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

   Microelectronics Journal