Publicaciones en colaboración con investigadores/as de University of Sheffield (4)

2002

  1. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  2. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

    Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

  3. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

2001

  1. Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 27-31