Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

  1. Gutiérrez, M.
  2. González, D.
  3. Aragón, G.
  4. Hopkinson, M.
  5. García, R.
Aldizkaria:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Argitalpen urtea: 2001

Alea: 80

Zenbakia: 1-3

Orrialdeak: 27-31

Mota: Artikulua

DOI: 10.1016/S0921-5107(00)00579-1 GOOGLE SCHOLAR
Datuen iturria: Scopus