Effect of graded buffer design on the defect structure in InGaAs/GaAs (111)B heterostructures

  1. Gutiérrez, M.
  2. González, D.
  3. Aragón, G.
  4. Hopkinson, M.
  5. García, R.
Revue:
Materials Science and Engineering B: Solid-State Materials for Advanced Technology

ISSN: 0921-5107

Année de publication: 2001

Volumen: 80

Número: 1-3

Pages: 27-31

Type: Article

DOI: 10.1016/S0921-5107(00)00579-1 GOOGLE SCHOLAR
La source de données: Scopus