GUILLERMO
ARAGON TORRE
Investigador en el període 2000-2019
Instituto de Microelectrónica de Madrid
Madrid, EspañaPublicacions en col·laboració amb investigadors/es de Instituto de Microelectrónica de Madrid (8)
2002
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AFM and TEM study of the lateral composition modulation in etched and photo etched InxGa1-xP epitaxial layers
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
1998
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Correlation between optical properties and barrier composition in InxGa1-xGaAs quantum wells
Journal of Applied Physics, Vol. 84, Núm. 12, pp. 6832-6840
1997
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Advantages of thin interfaces in step-graded buffer structures
Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45
1996
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Relaxation behavior of undoped InxGa1-xP 0.5<×<0.7 grown on GaAs by atomic layer molecular-beam epitaxy
Journal of Applied Physics, Vol. 80, Núm. 6, pp. 3327-3332
1994
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A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 196-199
1993
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A study of the evolution process of antiphase boundaries in GaAs on Si
Journal of Electronic Materials, Vol. 22, Núm. 5, pp. 567-572
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Experimental evidence of the structure of annihilation of antiphase boundaries in GaAs on Si
Materials Letters, Vol. 15, Núm. 5-6, pp. 353-355
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Structural characterization of highly strained InAs N monolayer lasers and quantum well structures by X-ray diffraction and transmission electron microscopy
Journal of Crystal Growth, Vol. 127, Núm. 1-4, pp. 596-600