Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems

  1. González, D.
  2. Araújo, D.
  3. Aragón, G.
  4. García, R.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 1998

Volumen: 72

Número: 15

Pages: 1875-1877

Type: Article

DOI: 10.1063/1.121212 GOOGLE SCHOLAR
La source de données: Scopus