A study of the defect structure in GaAs layers grown at low and high temperatures on Si(001) substrates

  1. Aragón, G.
  2. Molina, S.I.
  3. Pacheco, F.J.
  4. González, Y.
  5. González, L.
  6. Briones, F.
  7. García, R.
Revue:
Materials Science and Engineering B

ISSN: 0921-5107

Année de publication: 1994

Volumen: 28

Número: 1-3

Pages: 196-199

Type: Article

DOI: 10.1016/0921-5107(94)90046-9 GOOGLE SCHOLAR
La source de données: Scopus