Relaxation behavior of undoped InxGa1-xP 0.5<×<0.7 grown on GaAs by atomic layer molecular-beam epitaxy

  1. González, L.
  2. González, Y.
  3. Aragón, G.
  4. Castro, M.J.
  5. Dotor, M.L.
  6. Dunstan, D.J.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1996

Volume: 80

Issue: 6

Pages: 3327-3332

Type: Article

DOI: 10.1063/1.363243 GOOGLE SCHOLAR
Data source: Scopus