José Ignacio Izpura Torres-rekin lankidetzan egindako argitalpenak (9)

2002

  1. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  2. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

    Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

  3. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

1999

  1. Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431

  2. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378

  3. Influence of substrate misorientation on the structural characteristics of InGaAs/GaAs MQW on (111)B GaAs grown by MBE

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 558-561

  4. New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 467-470

  5. Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

    Journal of Crystal Growth, Vol. 201, pp. 1085-1088

  6. Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

    Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293