Publikationen in Zusammenarbeit mit Forschern von Universidad Politécnica de Madrid (10)

2002

  1. Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation

    Microelectronics Journal

  2. Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates

    Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543

  3. The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures

    Microelectronics Journal

2001

  1. Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors

    Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392

1999

  1. Cathodoluminescence study of pyramidal facets in piezoelectric InGaAs/GaAs multiple quantum well pin photodiodes

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 427-431

  2. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111)B GaAs by molecular beam epitaxy

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 373-378

  3. New relaxation mechanisms in InGaAs/GaAs (111) multiple quantum well

    Microelectronics Journal, Vol. 30, Núm. 4, pp. 467-470

  4. Optical properties of InxGa1-xAs/GaAs MQW structures on (1 1 1)B GaAs grown by MBE: Dependence on substrate miscut

    Journal of Crystal Growth, Vol. 201, pp. 1085-1088

  5. Relaxation study of InxGa1-xAs/GaAs quantum-well structures grown by MBE on (0 0 1) and (1 1 1)B GaAs for long wavelength applications

    Journal of Crystal Growth, Vol. 206, Núm. 4, pp. 287-293

1994

  1. Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters

    Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519