Tecnología de estructuras
GITE
![Foto de Tecnología de estructuras](/img/uploaded/E47FC5B25828AF76F703971AD820F327.jpg)
![Foto de Universidad Politécnica de Madrid](/img/noimage_org.png)
Universidad Politécnica de Madrid
Madrid, EspañaPublikationen in Zusammenarbeit mit Forschern von Universidad Politécnica de Madrid (4)
2002
-
Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
-
Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates
Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543
-
The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal
2001
-
Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392