Tecnología de estructuras
GITE
Universidad Politécnica de Madrid
Madrid, EspañaUniversidad Politécnica de Madrid-ko ikertzaileekin lankidetzan egindako argitalpenak (4)
2002
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Relaxation study of AlGaAs cladding layers in InGaAs/GaAs (111)B lasers designed for 1.0-1.1 μm operation
Microelectronics Journal
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Strain relaxation behavior of InxGa1-xAs quantum wells on vicinal GaAs (111)B substrates
Applied Physics Letters, Vol. 80, Núm. 9, pp. 1541-1543
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The role of climb and glide in misfit relief of InGaAs/GaAs(111)B heterostructures
Microelectronics Journal
2001
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Effect of indium content on the normal-incident photoresponse of InGaAs/GaAs quantum-well infrared photodetectors
Applied Physics Letters, Vol. 78, Núm. 16, pp. 2390-2392