INGENIERIA CIVIL
Departamento
Daniel
Araújo Gay
Publikationen, an denen er mitarbeitet Daniel Araújo Gay (8)
2000
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Control of phase modulation in InGaAs epilayers
Applied Physics Letters, Vol. 76, Núm. 22, pp. 3236-3238
1999
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Effect of In-content on the misfit dislocation interaction in InGaAs/GaAs layers
Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 302-304
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Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers
Applied Physics Letters, Vol. 74, Núm. 18, pp. 2649-2651
1998
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Critical thickness for the saturation state of strain relaxation in the InGaAs/GaAs systems
Applied Physics Letters, Vol. 72, Núm. 15, pp. 1875-1877
1997
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A work-hardening based model of the strain relief in multilayer graded-buffer structures
Applied Physics Letters, Vol. 71, Núm. 21, pp. 3099-3101
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Advantages of thin interfaces in step-graded buffer structures
Materials Science and Engineering B, Vol. 44, Núm. 1-3, pp. 41-45
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Work-hardening effects in the lattice relaxation of single lay er heterostructures
Applied Physics Letters, Vol. 71, Núm. 17, pp. 2475-2477
1994
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Transmission electron microscopy study of InxGa1-xAs/GaAs multilayer buffer structures used as dislocation filters
Materials Science and Engineering B, Vol. 28, Núm. 1-3, pp. 515-519