Growth rate and critical temperatures to avoid the modulation of composition of InGaAs epitaxial layers

  1. González, D.
  2. Aragón, G.
  3. Araújo, D.
  4. De Castro, M.J.
  5. García, R.
Journal:
Applied Physics Letters

ISSN: 0003-6951

Year of publication: 1999

Volume: 74

Issue: 18

Pages: 2649-2651

Type: Article

DOI: 10.1063/1.123926 GOOGLE SCHOLAR
Data source: Scopus